PMDPB56XNEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.1A, 4.5V

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Terminal Form :

NO LEAD

Number of Terminations :

6

JESD-30 Code :

R-PDSO-N6

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

485mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 15V

Reference Standard :

AEC-Q101; IEC-60134

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

3.1A

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.072Ohm

Transistor Application :

SWITCHING

Published :

2016

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

6-UDFN Exposed Pad

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE