PMV30XN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-236AB

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

35m Ω @ 3.2A, 4.5V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Source Url Status Check Date :

2013-06-14 00:00:00

Terminal Position :

Dual

Power Dissipation-Max :

380mW Ta

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 15V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Published :

2013

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

3.2A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Drain-source On Resistance-Max :

0.035Ohm

JESD-609 Code :

e3

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

FET Type :

N-Channel

Reference Standard :

IEC-60134