PT100MC0MP

Manufacturer :

Sharp Microelectronics

Product Category :

Optical Sensors - Phototransistors

Collector Emitter Breakdown Voltage :

35V

Infrared Range :

yes

Factory Lead Time :

13 Weeks

Polarity :

NPN

Optoelectronic Device Type :

PHOTO TRANSISTOR

Wavelength - Peak :

900 nm

Shape :

Round

Published :

1999

Configuration :

Single

Mount :

Surface Mount

REACH SVHC :

Unknown

Radiation Hardening :

No

JESD-609 Code :

e4

Rise Time :

5μs

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Consumption :

75mW

Max Collector Current :

20mA

Dark Current :

100nA

Operating Temperature :

-30°C~85°C TA

Viewing Angle :

30°

Collector Emitter Voltage (VCEO) :

6V

Package / Case :

2-SMD, No Lead

Lens Style :

Domed

Light Current-Nom :

2.9mA

Lens Color :

Clear

Power Dissipation :

75mW

Terminal Finish :

Gold (Au)

Output Current :

20mA

Max Power Dissipation :

75mW

Number of Pins :

2

RoHS Status :

RoHS Compliant

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

400mV

Max Breakdown Voltage :

35V

Number of Elements :

1

Fall Time (Typ) :

6 μs

Number of Functions :

1

Lead Free :

Lead Free

Orientation :

Universal