PUMD3,165

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

10k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Terminal Finish :

Tin (Sn)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

6

Pin Count :

6

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Collector Current :

100mA

Transition Frequency :

230MHz

Base Part Number :

P*MD3

Published :

2008

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN, PNP

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

1μA

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Radiation Hardening :

No