QS5W2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

50V

Lead Free :

Lead Free

Configuration :

COMMON EMITTER, 2 ELEMENTS

Transistor Type :

2 NPN (Dual) Common Emitter

Collector Emitter Voltage (VCEO) :

350mV

ECCN Code :

EAR99

Power - Max :

1.25W

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Published :

2015

Current - Collector Cutoff (Max) :

1μA ICBO

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Transition Frequency :

320MHz

Number of Elements :

2

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Factory Lead Time :

20 Weeks

Pin Count :

5

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Max Collector Current :

3A

Max Power Dissipation :

1.25W

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

320MHz

Vce Saturation (Max) @ Ib, Ic :

350mV @ 50mA, 1A

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G5

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 50mA 3V