R6007ENX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2013

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.62Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

14A

Power Dissipation-Max :

40W Tc

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Threshold Voltage :

4V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Number of Terminations :

3

REACH SVHC :

No SVHC

FET Type :

N-Channel

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mount :

Through Hole

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

620m Ω @ 2.4A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Drain Current-Max (Abs) (ID) :

7A

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk

Reach Compliance Code :

not_compliant