R6024ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Vgs (Max) :

±20V

Factory Lead Time :

10 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

24A

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

72A

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.165Ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Package / Case :

TO-3P-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

165m Ω @ 11.3A, 10V

Published :

2014

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

497 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

120W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V