R6030ENX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Continuous Drain Current (ID) :

30A

Operating Temperature :

150°C TJ

Number of Elements :

1

Turn On Delay Time :

40 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Packaging :

Bulk

Transistor Element Material :

SILICON

Power Dissipation-Max :

40W Tc

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

130m Ω @ 14.5A, 10V

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

190 ns

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Terminal Position :

Single

Width :

4.8mm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

Number of Channels :

1

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 1mA

Factory Lead Time :

18 Weeks

Length :

10.3mm

Rise Time :

55ns

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

Published :

2014

Threshold Voltage :

4V

Weight :

2.565008g

Fall Time (Typ) :

60 ns

Height :

15.4mm