R8008ANX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Turn-Off Delay Time :

85 ns

Packaging :

Bulk

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.03 Ω @ 4A, 10V

Published :

2011

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PSFM-T3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 1mA

Turn On Delay Time :

32 ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

30 ns

Power Dissipation :

50W

Transistor Application :

SWITCHING

Element Configuration :

Single

Mount :

Through Hole

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

32A

Avalanche Energy Rating (Eas) :

4.2 mJ

Power Dissipation-Max :

50W Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Drain to Source Breakdown Voltage :

800V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Factory Lead Time :

10 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

ROHS3 Compliant

Rise Time :

50ns