RF4E080BNTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

17.6m Ω @ 8A, 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

32A

Mount :

Surface Mount

Continuous Drain Current (ID) :

8A

Element Configuration :

Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

33 ns

Time@Peak Reflow Temperature-Max (s) :

10

Drain-source On Resistance-Max :

0.0246Ohm

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Number of Terminations :

6

Lead Free :

Lead Free

Turn On Delay Time :

8 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A Ta

JESD-30 Code :

S-PDSO-N6

Fall Time (Typ) :

7 ns

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Power Dissipation-Max :

2W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerUDFN

Number of Channels :

1

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Case Connection :

DRAIN

Factory Lead Time :

20 Weeks

Number of Elements :

1

Published :

2013

Terminal Position :

Dual