RSS065N03TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

26A

Lead Free :

Lead Free

Rise Time :

8ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Power Dissipation-Max :

2W Ta

ECCN Code :

EAR99

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.042Ohm

JESD-609 Code :

e2

Transistor Element Material :

SILICON

Voltage - Rated DC :

30V

Number of Terminations :

8

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 10V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

6.5A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

40 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

31 ns

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 5V

Published :

2004

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Current Rating :

6.5A

Number of Pins :

8

Power Dissipation :

2W

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.5A, 10V

Pin Count :

8

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Finish :

TIN COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)