RTF025N03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

JESD-609 Code :

e2

FET Type :

N-Channel

Mounting Type :

Surface Mount

Resistance :

67mOhm

Published :

2007

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

800mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Lead Free :

Lead Free

Current Rating :

2.5A

Fall Time (Typ) :

15 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

10

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Number of Terminations :

3

Power Dissipation-Max :

800mW Ta

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Pbfree Code :

yes

Pin Count :

3

Continuous Drain Current (ID) :

2.5A

Rise Time :

15ns

Number of Elements :

1

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

67m Ω @ 2.5A, 4.5V

Threshold Voltage :

1.5V

Turn-Off Delay Time :

27 ns

Operating Temperature :

150°C TJ

Number of Pins :

3

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Package / Case :

3-SMD, Flat Lead