RU1L002SNTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

5ns

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

DS Breakdown Voltage-Min :

60V

Fall Time (Typ) :

28 ns

Terminal Form :

Flat

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

250mA

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

Published :

2011

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Number of Terminations :

3

Package / Case :

SC-85

Number of Pins :

3

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Turn On Delay Time :

3.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Packaging :

Digi-Reel®

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

18 ns

Drain Current-Max (Abs) (ID) :

0.25A

Power Dissipation-Max :

200mW Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.3V @ 1mA