S34MS04G200BHA003

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Mfr.Part #
S34MS04G200BHA003
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
IC FLASH 4GBIT PARALLEL 63BGA
Stock
5,032
In Stock :
5,032

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Memory Density :
4294967296 bit
Terminal Pitch :
0.8mm
Memory Width :
8
Parallel/Serial :
Parallel
Supply Voltage :
1.8V
Organization :
512MX8
Surface Mount :
yes
Supply Voltage-Max (Vsup) :
1.95V
Operating Temperature (Max) :
85°C
RoHS Status :
RoHS Compliant
Terminal Form :
Ball
Width :
9mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Temperature (Min) :
-40°C
Number of Functions :
1
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Memory IC Type :
Flash
Height Seated (Max) :
1mm
Temperature Grade :
Industrial
Supply Voltage-Min (Vsup) :
1.7V
Screening Level :
AEC-Q100
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
11mm
Operating Mode :
ASYNCHRONOUS
Programming Voltage :
1.8V
Terminal Position :
BOTTOM
JESD-30 Code :
R-PBGA-B63
Number of Terminations :
63
Datasheets
S34MS04G200BHA003
Introducing Memory Infineon Technologies S34MS04G200BHA003 from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:63, S34MS04G200BHA003 pinout, S34MS04G200BHA003 datasheet PDF, S34MS04G200BHA003 amp .Beyond Memory Infineon Technologies S34MS04G200BHA003 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies S34MS04G200BHA003


Memory Infineon Technologies S34MS04G200BHA003 Overview

The Memory Infineon Technologies S34MS04G200BHA003 is a high-capacity, parallel-interface NAND Flash memory device, ideal for applications that demand high data throughput and storage density. This 4Gbit IC is housed in a compact 63-ball grid array (BGA) package, ensuring robust performance while maintaining a small footprint. Engineered by Infineon Technologies, a leader in semiconductor solutions, this flash memory is designed to deliver reliable data integrity and fast read/write capabilities, making it perfect for intensively data-driven applications.

S34MS04G200BHA003 Features

The S34MS04G200BHA003 offers several technical advancements that enhance its functionality across various applications:

  • Large storage capacity of 4Gbit allows for extensive data logging and storage.
  • Parallel interface provides faster data transfer rates compared to serial NAND, thus facilitating quicker system responsiveness.
  • Compact 63BGA packaging makes it suitable for space-constrained applications.
  • Enhanced durability and reliability, typical of Infineon's robust manufacturing standards.

S34MS04G200BHA003 Applications

  • Embedded Systems: Utilized in complex embedded systems, the S34MS04G200BHA003 provides the necessary robust and high-capacity memory storage for efficient processing and operation.
  • Automotive Applications: Ideal for data storage in automotive environments where durability and reliability are paramount.
  • Mobile Devices: Supports high storage capacities in mobile devices, improving user experience through enhanced multimedia storage and retrieval.
  • Industrial Automation: Plays a critical role in industrial automation systems where large data capture and real-time processing are essential.
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