SI2301BDS-T1-E3

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Mfr.Part #
SI2301BDS-T1-E3
Manufacturer
Vishay
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 20V 2.2A SOT23-3
Stock
94,133
In Stock :
94,133

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Terminal Position :
Dual
Mounting Type :
Surface Mount
Power Dissipation-Max :
700mW Ta
Resistance :
100MOhm
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.12mm
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Element Material :
SILICON
FET Type :
P-Channel
Vgs (Max) :
±8V
Width :
1.4mm
Number of Channels :
1
Radiation Hardening :
No
Continuous Drain Current (ID) :
-2.2A
Current - Continuous Drain (Id) @ 25°C :
2.2A Ta
Number of Elements :
1
Pbfree Code :
yes
Turn-Off Delay Time :
30 ns
Power Dissipation :
700mW
Mount :
Surface Mount
Terminal Form :
Gull wing
Rise Time :
40ns
Peak Reflow Temperature (Cel) :
260
Max Junction Temperature (Tj) :
150°C
Published :
2003
Fall Time (Typ) :
40 ns
Length :
3.04mm
Gate to Source Voltage (Vgs) :
8V
Turn On Delay Time :
20 ns
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Factory Lead Time :
14 Weeks
Threshold Voltage :
-950mV
REACH SVHC :
Unknown
Series :
TrenchFET®
Drain to Source Voltage (Vdss) :
20V
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Drain to Source Breakdown Voltage :
-20V
Nominal Vgs :
-950 mV
Contact Plating :
Tin
Vgs(th) (Max) @ Id :
950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
375pF @ 6V
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Weight :
1.437803g
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Pin Count :
3
Rds On (Max) @ Id, Vgs :
100m Ω @ 2.8A, 4.5V
Datasheets
SI2301BDS-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI2301BDS-T1-E3 from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, SI2301BDS-T1-E3 pinout, SI2301BDS-T1-E3 datasheet PDF, SI2301BDS-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI2301BDS-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI2301BDS-T1-E3


P-Channel Tape & Reel (TR) 100m Ω @ 2.8A, 4.5V ±8V 375pF @ 6V 10nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

SI2301BDS-T1-E3 Overview


The maximum input capacitance of this device is 375pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -2.2A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -950mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

SI2301BDS-T1-E3 Features


a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 30 ns
a threshold voltage of -950mV
a 20V drain to source voltage (Vdss)


SI2301BDS-T1-E3 Applications


There are a lot of Vishay Siliconix
SI2301BDS-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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