SI7100DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

26.1A

Input Capacitance (Ciss) (Max) @ Vds :

3810pF @ 4V

ECCN Code :

EAR99

Length :

3.05mm

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

60A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Mount :

Surface Mount

Rise Time :

52ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

14 ns

Height :

1.04mm

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0035Ohm

JESD-30 Code :

S-XDSO-C5

Number of Elements :

1

Element Configuration :

Single

Pin Count :

8

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

3.8W Ta 52W Tc

Number of Terminations :

5

JESD-609 Code :

e3

Number of Channels :

1

Width :

3.05mm

Terminal Form :

C BEND

Terminal Finish :

PURE MATTE TIN

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 15A, 4.5V

Terminal Position :

Dual

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

35A

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

8V

Turn-Off Delay Time :

53 ns

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Pins :

8

Fall Time (Typ) :

8 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® 1212-8

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 8V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Operating Temperature :

-50°C~150°C TJ