SI7818DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

Length :

3.05mm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Width :

3.05mm

Terminal Position :

Dual

Radiation Hardening :

No

Height :

1.04mm

Case Connection :

DRAIN

Published :

2007

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Avalanche Energy Rating (Eas) :

4 mJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

150V

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Turn On Delay Time :

10 ns

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

135m Ω @ 3.4A, 10V

Vgs (Max) :

±20V

JESD-30 Code :

R-XDSO-C5

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

3.4A

Terminal Form :

C BEND

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

2.2A

Turn-Off Delay Time :

25 ns

Lead Free :

Lead Free

Package / Case :

PowerPAK® 1212-8

Power Dissipation :

1.5W

Number of Terminations :

5

Resistance :

135mOhm

Factory Lead Time :

14 Weeks

Number of Pins :

8

Transistor Application :

SWITCHING

Pin Count :

8

ECCN Code :

EAR99

Series :

TrenchFET®

Element Configuration :

Single

JESD-609 Code :

e3

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1