SI8812DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

BOTTOM

Power Dissipation-Max :

500mW Ta

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 8V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Ball

Package / Case :

4-UFBGA

Rds On (Max) @ Id, Vgs :

59m Ω @ 1A, 4.5V

Vgs (Max) :

±5V

Drain-source On Resistance-Max :

0.065Ohm

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Factory Lead Time :

44 Weeks

Published :

2016

Packaging :

Digi-Reel®

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

3.2A

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Number of Channels :

1

ECCN Code :

EAR99

Element Configuration :

Single

DS Breakdown Voltage-Min :

20V

Mount :

Surface Mount

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

900mW