SI9926BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

31 ns

Length :

5mm

Drain to Source Resistance :

20mOhm

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Min Operating Temperature :

-55°C

Supplier Device Package :

8-SO

Rds On Max :

20 mΩ

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Series :

TrenchFET®

Height :

1.55mm

Number of Channels :

2

Nominal Vgs :

600 mV

Current - Continuous Drain (Id) @ 25°C :

6.2A

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

20mOhm @ 8.2A, 4.5V

Element Configuration :

Dual

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

6.2A

Mount :

Surface Mount

Power - Max :

1.14W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Width :

4mm

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

8

Drain to Source Breakdown Voltage :

20V

Published :

2015

Base Part Number :

SI9926

Max Power Dissipation :

1.14W

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Rise Time :

50ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn On Delay Time :

35 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)