SIE812DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

JESD-30 Code :

R-XDSO-N4

Power Dissipation-Max :

5.2W Ta 125W Tc

Drain-source On Resistance-Max :

0.0034Ohm

Element Configuration :

Single

Number of Elements :

1

Number of Channels :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

40V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Package / Case :

10-PolarPAK® (L)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

8300pF @ 20V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Pins :

10

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2.3 V

Terminal Form :

NO LEAD

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

60A

Mount :

Surface Mount

Number of Terminations :

4

Terminal Position :

Dual

Pbfree Code :

yes

Pin Count :

10

Mounting Type :

Surface Mount

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Fall Time (Typ) :

10 ns