SIR418DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

70A

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PDSO-C5

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Number of Channels :

1

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Rise Time :

73ns

Threshold Voltage :

2.4V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Radiation Hardening :

No

Power Dissipation-Max :

39W Tc

Fall Time (Typ) :

12 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

45 mJ

Drain Current-Max (Abs) (ID) :

23.5A

Power Dissipation :

5W

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

19 ns

REACH SVHC :

Unknown

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Turn-Off Delay Time :

32 ns

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 20V

Terminal Form :

C BEND

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Continuous Drain Current (ID) :

40A

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Nominal Vgs :

2.4 V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Package / Case :

PowerPAK® SO-8

Weight :

506.605978mg

Published :

2009

Drain-source On Resistance-Max :

0.005ohm

Time@Peak Reflow Temperature-Max (s) :

40