SMA5112

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

12

Mount :

Through Hole

DS Breakdown Voltage-Min :

250V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

35W

Supplier Device Package :

12-SIP

Drain Current-Max (Abs) (ID) :

7A

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

--

Package / Case :

12-SIP

RoHS Status :

RoHS Compliant

Type :

Power MOSFET

Pbfree Code :

yes

Base Product Number :

SMA51

Product Status :

Active

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSIP-T12

Gate-Source Voltage (Max) :

±20(V)

Series :

--

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 10V

Continuous Drain Current (ID) :

7A

Configuration :

COMPLEX

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.5Ohm

Number of Elements :

6

Technology :

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) :

250V

Operating Temperature Classification :

AUTOMOTIVEC

FET Type :

6 N-Channel (3-Phase Bridge)

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

500m Ω @ 3.5A, 10V

Power - Max :

4W

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

15A

Package :

Tube

Published :

2001

Continuous Drain Current :

7(A)

Avalanche Energy Rating (Eas) :

55 mJ

Pin Count :

12

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tube

Polarity :

N

Transistor Application :

SWITCHING

FET Feature :

Standard

Package Type :

SIP

Operating Temperature :

150°C TJ

Mounting :

Through Hole

Rad Hardened :

No

Power Dissipation :

4(W)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Drain-Source On-Volt :

250(V)

Operating Temp Range :

-40C to 150C

Current - Continuous Drain (Id) @ 25°C :

7A