SPD02N80C3ATMA1
- Mfr.Part #
- SPD02N80C3ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO252-3
- Stock
- 7,315
- In Stock :
- 7,315
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Series :
- CoolMOS™
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Min Operating Temperature :
- -55°C
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 2.7Ohm @ 1.2A, 10V
- Supplier Device Package :
- PG-TO252-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3.9V @ 120μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 2.7 Ω
- Turn-Off Delay Time :
- 65 ns
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 18 Weeks
- Power Dissipation-Max :
- 42W Tc
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 800V
- Rise Time :
- 15ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Continuous Drain Current (ID) :
- 2A
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 25 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 100V
- Max Dual Supply Voltage :
- 800V
- Input Capacitance :
- 290pF
- Fall Time (Typ) :
- 18 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±20V
- Current Rating :
- 2A
- Drain to Source Voltage (Vdss) :
- 800V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 2.4Ohm
- Power Dissipation :
- 42W
- Datasheets
- SPD02N80C3ATMA1

N-Channel Tape & Reel (TR) 2.7Ohm @ 1.2A, 10V ±20V 290pF @ 100V 16nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD02N80C3ATMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 290pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 2.4Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 800V, it supports the maximal dual supply voltage.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SPD02N80C3ATMA1 Features
a continuous drain current (ID) of 2A
the turn-off delay time is 65 ns
single MOSFETs transistor is 2.4Ohm
a 800V drain to source voltage (Vdss)
SPD02N80C3ATMA1 Applications
There are a lot of Infineon Technologies
SPD02N80C3ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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