SSM6G18NU,LF

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Mfr.Part #
SSM6G18NU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
MOSFET P-CH 20V 2A 6UDFN
Stock
3,925
In Stock :
3,925

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Power Dissipation-Max :
1W Ta
Gate Charge (Qg) (Max) @ Vgs :
4.6nC @ 4.5V
FET Feature :
Schottky Diode (Isolated)
Drain to Source Voltage (Vdss) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Rds On (Max) @ Id, Vgs :
112m Ω @ 1A, 4.5V
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
6-WDFN Exposed Pad
Vgs(th) (Max) @ Id :
1V @ 1mA
RoHS Status :
RoHS Compliant
Packaging :
Tape and Reel (TR)
FET Type :
P-Channel
Current - Continuous Drain (Id) @ 25°C :
2A Ta
Factory Lead Time :
12 Weeks
Vgs (Max) :
±8V
Datasheets
SSM6G18NU,LF
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:6-WDFN Exposed Pad, SSM6G18NU,LF pinout, SSM6G18NU,LF datasheet PDF, SSM6G18NU,LF amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF


P-Channel Tape & Reel (TR) 112m Ω @ 1A, 4.5V ±8V 270pF @ 10V 4.6nC @ 4.5V 20V 6-WDFN Exposed Pad

SSM6G18NU,LF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 10V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.5V 4.5V).

SSM6G18NU,LF Features


a 20V drain to source voltage (Vdss)


SSM6G18NU,LF Applications


There are a lot of Toshiba Semiconductor and Storage
SSM6G18NU,LF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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