STB100NF04T4
- Mfr.Part #
- STB100NF04T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A D2PAK
- Stock
- 1,031
- In Stock :
- 1,031
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.35mm
- Mount :
- Surface Mount
- Length :
- 10.4mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Threshold Voltage :
- 2V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Resistance :
- 4.6mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Nominal Vgs :
- 4 V
- Number of Pins :
- 3
- Turn On Delay Time :
- 35 ns
- Power Dissipation-Max :
- 300W Tc
- Fall Time (Typ) :
- 50 ns
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 80 ns
- Pulsed Drain Current-Max (IDM) :
- 480A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STB100N
- Dual Supply Voltage :
- 40V
- Radiation Hardening :
- No
- Power Dissipation :
- 300W
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 120A
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Rise Time :
- 220ns
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Height :
- 4.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 50A, 10V
- Peak Reflow Temperature (Cel) :
- 245
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Series :
- Automotive, AEC-Q101, STripFET™ II
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Termination :
- SMD/SMT
- Datasheets
- STB100NF04T4

N-Channel Tape & Reel (TR) 4.6m Ω @ 50A, 10V ±20V 5100pF @ 25V 150nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB100NF04T4 Description
STB100NF04T4 is an Automotive-grade N-channel STripFET? II Power MOSFET. The Power MOSFET STB100NF04T4 has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the STB100NF04T4 suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
STB100NF04T4 Features
-
AEC-Q101 qualified
-
Exceptional dv/dt capability?
-
100% avalanche tested?
-
Low gate charge
-
In the TO-263-3 package
STB100NF04T4 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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