STD20NF06L

Manufacturer :

UTD Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rds On (Max) @ Id, Vgs :

40m Ω @ 12A, 10V

Base Part Number :

STD20N

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Threshold Voltage :

2.5V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

60W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Series :

STripFET™ II

JESD-30 Code :

R-PSSO-G2

Length :

6.6mm

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

11 ns

Current Rating :

24A

Operating Mode :

ENHANCEMENT MODE

Width :

6.2mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Contact Plating :

Tin

FET Type :

N-Channel

Terminal Form :

Gull wing

Height :

2.4mm

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

18V

Voltage - Rated DC :

60V

REACH SVHC :

No SVHC

Resistance :

40mOhm

Pin Count :

3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

96A

Nominal Vgs :

2.5 V

Vgs (Max) :

±18V

Number of Terminations :

2

Continuous Drain Current (ID) :

24A

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

60W Tc

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Number of Elements :

1

Rise Time :

50ns

Number of Pins :

3