STD35NF06L
- Mfr.Part #
- STD35NF06L
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TO-252 MOSFETS ROHS
- Stock
- 5,625
- In Stock :
- 5,625
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±16V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 17.5A
- Current Rating :
- 35A
- JEDEC-95 Code :
- TO-252AA
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 175°C
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Width :
- 6.2mm
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Power Dissipation-Max :
- 80W Tc
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 20 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 40 ns
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Element Configuration :
- Single
- Rise Time :
- 100ns
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 20 ns
- Base Part Number :
- STD35
- Resistance :
- 17mOhm
- Threshold Voltage :
- 1V
- Series :
- STripFET™ II
- Height :
- 2.63mm
- Gate to Source Voltage (Vgs) :
- 16V
- Power Dissipation :
- 80W
- Number of Terminations :
- 2
- Length :
- 6.6mm
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 17.5A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Datasheets
- STD35NF06L
N-Channel Tape & Reel (TR) 17m Ω @ 17.5A, 10V ±16V 1700pF @ 25V 33nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
STD35NF06LT4 Features
Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability
STD35NF06LT4 Applications
Industrial
Communications & Networking,
Computers & Computer Peripherals
Automotive
Switching application
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