STD35NF06L
- Mfr.Part #
- STD35NF06L
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TO-252 MOSFETS ROHS
- Stock
- 5,625
- In Stock :
- 5,625
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 20 ns
- Transistor Application :
- SWITCHING
- Length :
- 6.6mm
- Power Dissipation :
- 80W
- Power Dissipation-Max :
- 80W Tc
- Number of Elements :
- 1
- Vgs (Max) :
- ±16V
- Series :
- STripFET™ II
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 17.5A
- Height :
- 2.63mm
- Resistance :
- 17mOhm
- Pin Count :
- 3
- Max Junction Temperature (Tj) :
- 175°C
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 40 ns
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 35A
- Threshold Voltage :
- 1V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-252AA
- Base Part Number :
- STD35
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Drain to Source Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Turn On Delay Time :
- 20 ns
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 16V
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 17.5A, 10V
- REACH SVHC :
- No SVHC
- Number of Channels :
- 1
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Width :
- 6.2mm
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Rise Time :
- 100ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STD35NF06L
N-Channel Tape & Reel (TR) 17m Ω @ 17.5A, 10V ±16V 1700pF @ 25V 33nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
STD35NF06LT4 Features
Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability
STD35NF06LT4 Applications
Industrial
Communications & Networking,
Computers & Computer Peripherals
Automotive
Switching application
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