STD38NH02LT4
- Mfr.Part #
- STD38NH02LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 38A DPAK
- Stock
- 31,283
- In Stock :
- 31,283
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 13.5m Ω @ 19A, 10V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Drain to Source Breakdown Voltage :
- 24V
- JEDEC-95 Code :
- TO-252AA
- Continuous Drain Current (ID) :
- 38A
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 25 ns
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 40W Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Rise Time :
- 62ns
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Series :
- STripFET™ III
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 24V
- Pulsed Drain Current-Max (IDM) :
- 152A
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- ±20V
- Current Rating :
- 38A
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 12 ns
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 0.0135Ohm
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Base Part Number :
- STD38
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- STD38NH02LT4

N-Channel Cut Tape (CT) 13.5m Ω @ 19A, 10V ±20V 1070pF @ 25V 24nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD38NH02LT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 1070pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 152A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD38NH02LT4 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 152A.
STD38NH02LT4 Applications
There are a lot of STMicroelectronics
STD38NH02LT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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