STD50NH02L-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

280 mJ

Continuous Drain Current (ID) :

50A

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V

Series :

STripFET™ III

Transistor Element Material :

SILICON

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

24V

Case Connection :

DRAIN

Rise Time :

130ns

Terminal Position :

Single

Current Rating :

50A

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Additional Feature :

LOW THRESHOLD

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

ECCN Code :

EAR99

Power Dissipation-Max :

60W Tc

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pin Count :

3

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Base Part Number :

STD50N

Drain-source On Resistance-Max :

0.0105Ohm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

200A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA