STF9N60M2

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Mfr.Part #
STF9N60M2
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 5.5A TO220FP
Stock
3,971
In Stock :
3,971

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
22 ns
Input Capacitance (Ciss) (Max) @ Vds :
320pF @ 100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
5.5A
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Base Part Number :
STF9
Vgs (Max) :
±25V
Packaging :
Tube
Power Dissipation-Max :
20W Tc
Length :
10.4mm
Operating Temperature :
150°C TJ
Drain to Source Voltage (Vdss) :
600V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Width :
4.6mm
Element Configuration :
Single
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
5.5A Tc
Height :
16.4mm
Turn On Delay Time :
8.8 ns
Rds On (Max) @ Id, Vgs :
780m Ω @ 3A, 10V
Drain to Source Breakdown Voltage :
650V
Package / Case :
TO-220-3 Full Pack
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
25V
Factory Lead Time :
16 Weeks
Vgs(th) (Max) @ Id :
4V @ 250µA
Fall Time (Typ) :
13.5 ns
Rise Time :
7.5ns
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
ECCN Code :
EAR99
Lead Free :
Lead Free
Mounting Type :
Through Hole
Number of Pins :
3
Series :
MDmesh™ II Plus
Datasheets
STF9N60M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF9N60M2 from Xinshop,where excellence meets affordability. This product stands out with its Base Part Number:STF9, Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Number of Pins:3, STF9N60M2 pinout, STF9N60M2 datasheet PDF, STF9N60M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF9N60M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF9N60M2


N-Channel Tube 780m Ω @ 3A, 10V ±25V 320pF @ 100V 10nC @ 10V 600V TO-220-3 Full Pack


STF9N60M2 Description


These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.



STF9N60M2 Features


Extremely low gate charge

Lower RDS(on) x area vs the previous generation

Low gate input resistance

100% avalanche tested

Zener-protected



STF9N60M2 Applications


Switching applications


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