STL50DN6F7
- Mfr.Part #
- STL50DN6F7
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 57A POWERFLAT
- Stock
- 6,885
- In Stock :
- 6,885
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 7.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- Base Part Number :
- STL50
- Lead Free :
- Lead Free
- Number of Terminations :
- 6
- Series :
- STripFET™
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 62.5W
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerVDFN
- Continuous Drain Current (ID) :
- 57A
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.011Ohm
- DS Breakdown Voltage-Min :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- FET Type :
- 2 N-Channel (Dual)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1035pF @ 30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 2
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F6
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 57A Tc
- FET Feature :
- Standard
- Drain to Source Voltage (Vdss) :
- 60V
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Datasheets
- STL50DN6F7

STL50DN6F7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at
STL50DN6F7 Description
By combining STripFETTM F7 technology with an improved trench gate structure, this dual N-channel Power MOSFET achieves extremely low onstate resistance while also lowering internal capacitance and gate charge for quicker and more effective switching. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
STL50DN6F7 Features
-
one of the lowest RDS(on)s available
-
Outstanding figure of merit (FoM)
-
Low Crss/Ciss ratio to prevent EMI
-
Extremely rough under avalanches
STL50DN6F7 Applications
Switching applications
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