STP100N6F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

125W Tc

Base Part Number :

STP100

Series :

STripFET™ F7

Terminal Position :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0056Ohm

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1980pF @ 25V

Number of Terminations :

3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

22 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 50A, 10V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mount :

Through Hole

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

200 mJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

100A

Configuration :

SINGLE WITH BUILT-IN DIODE