STP20N20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Operating Temperature :

-50°C~150°C TJ

Drain to Source Breakdown Voltage :

200V

Base Part Number :

STP20N

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

18A

Rise Time :

30ns

Power Dissipation-Max :

90W Tc

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

125m Ω @ 10A, 10V

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

40 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

90W

Transistor Element Material :

SILICON

Current Rating :

18A

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Pin Count :

3

Voltage - Rated DC :

200V

Element Configuration :

Single

Mounting Type :

Through Hole

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

72A

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Series :

STripFET™ II

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

ECCN Code :

EAR99