STP60NE06-16

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Mounting Type :

Through Hole

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

150W Tc

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Package / Case :

TO-220-3

Pin Count :

3

Radiation Hardening :

No

Current Rating :

60A

Number of Terminations :

3

Base Part Number :

STP60N

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

60A

FET Type :

N-Channel

Turn On Delay Time :

40 ns

Avalanche Energy Rating (Eas) :

350 mJ

Operating Temperature :

175°C TJ

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

16m Ω @ 30A, 10V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

240A

Fall Time (Typ) :

150 ns

Lead Free :

Lead Free

Power Dissipation :

150W

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

60V

Drain-source On Resistance-Max :

0.016Ohm

Rise Time :

125ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE