STP75

Manufacturer :

Banner Engineering

Product Category :

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Length :

10.4mm

Turn On Delay Time :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Width :

4.6mm

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Radiation Hardening :

No

Rise Time :

100ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300W

Case Connection :

DRAIN

Height :

9.15mm

ECCN Code :

EAR99

Vgs (Max) :

±20V

Base Part Number :

STP75N

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

700 mJ

Factory Lead Time :

12 Weeks

Series :

STripFET™ II

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

JESD-609 Code :

e3

Threshold Voltage :

3V

Voltage - Rated DC :

75V

Drain Current-Max (Abs) (ID) :

75A

Element Configuration :

Single

Packaging :

Tube

Pin Count :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

66 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Resistance :

11mOhm

Drain to Source Breakdown Voltage :

75V

Weight :

9.071847g

Current Rating :

80A

Power Dissipation-Max :

300W Tc

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Terminations :

3

FET Type :

N-Channel