STP80NF03L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0065ohm

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Terminations :

3

Rise Time :

270ns

Power Dissipation :

300W

Vgs (Max) :

±20V

Turn On Delay Time :

30 ns

Operating Temperature :

175°C TJ

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A

Packaging :

Tube

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 40A, 10V

Mount :

Through Hole

Width :

4.6mm

Terminal Finish :

Tin

Number of Elements :

1

Voltage - Rated DC :

30V

Current Rating :

80A

Length :

10.4mm

Base Part Number :

STP80N

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

1.12 μs

Pin Count :

3

Drain to Source Breakdown Voltage :

30V

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Fall Time (Typ) :

95 ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Series :

STripFET™ II

Mounting Type :

Through Hole

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

9.15mm