STS3C2F100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

3A

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Mount :

Surface Mount

JESD-609 Code :

e4

FET Type :

N and P-Channel

Max Power Dissipation :

2W

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Lead Free :

Lead Free

Fall Time (Typ) :

7.5 ns

Transistor Application :

SWITCHING

Base Part Number :

STS3D

Drain-source On Resistance-Max :

0.145Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Number of Elements :

2

Turn-Off Delay Time :

33 ns

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Current Rating :

3A

Series :

STripFET™

Continuous Drain Current (ID) :

3A

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

145m Ω @ 1.5A, 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

100V

Voltage - Rated DC :

100V

Rise Time :

20ns

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Finish :

NICKEL PALLADIUM GOLD

Peak Reflow Temperature (Cel) :

260