STS3C2F100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

JESD-609 Code :

e4

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

3A

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Series :

STripFET™

FET Type :

N and P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

Pin Count :

8

FET Feature :

Logic Level Gate

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.145Ohm

Voltage - Rated DC :

100V

ECCN Code :

EAR99

Lead Free :

Lead Free

Base Part Number :

STS3D

Number of Terminations :

8

Current Rating :

3A

Rds On (Max) @ Id, Vgs :

145m Ω @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Finish :

NICKEL PALLADIUM GOLD

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

7.5 ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

33 ns

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

100V

Rise Time :

20ns