STW30N65M5
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- Mfr.Part #
- STW30N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO247-3
- Stock
- 15,239
- In Stock ：
- 15,239
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Power Dissipation-Max :
- 140W Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Breakdown Voltage :
- 650V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 22A
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Series :
- MDmesh™ V
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Fall Time (Typ) :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2880pF @ 100V
- Base Part Number :
- STW30N
- Operating Temperature :
- 150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Pins :
- 3
- Factory Lead Time :
- 17 Weeks
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 50 ns
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Power Dissipation :
- 140W
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 50 ns
- Package / Case :
- TO-247-3
- Length :
- 15.75mm
- Width :
- 5.15mm
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Resistance :
- 139mOhm
- Rise Time :
- 8ns
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Height :
- 20.15mm
- Element Configuration :
- Single
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 88A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 139m Ω @ 11A, 10V
- Additional Feature :
- AVALANCHE ENERGY RATED
- Datasheets
- STW30N65M5
N-Channel Tube 139m Ω @ 11A, 10V ±25V 2880pF @ 100V 64nC @ 10V TO-247-3
STW30N65M5 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2880pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 88A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 50 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STW30N65M5 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 88A.
STW30N65M5 Applications
There are a lot of STMicroelectronics
STW30N65M5 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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