SUP90140E-GE3

- Mfr.Part #
- SUP90140E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 90A TO220AB
- Stock
- 4,458





- In Stock :
- 4,458
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- REACH SVHC :
- Unknown
- Published :
- 2016
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 14 Weeks
- Terminal Position :
- Single
- Series :
- ThunderFET®
- DS Breakdown Voltage-Min :
- 200V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4132pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 7.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Power Dissipation-Max :
- 375W Tc
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 30A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Avalanche Energy Rating (Eas) :
- 180 mJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.018Ohm
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Threshold Voltage :
- 4V
- Pulsed Drain Current-Max (IDM) :
- 240A
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 90A
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 200V
- Datasheets
- SUP90140E-GE3

N-Channel Tube 17m Ω @ 30A, 10V ±20V 4132pF @ 100V 96nC @ 10V 200V TO-220-3
SUP90140E-GE3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The maximum input capacitance of this device is 4132pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.
SUP90140E-GE3 Features
the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 240A.
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
SUP90140E-GE3 Applications
There are a lot of Vishay Siliconix
SUP90140E-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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