TK10A60W,S4VX
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- Mfr.Part #
- TK10A60W,S4VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9.7A TO220SIS
- Stock
- 7,913
- In Stock ：
- 7,913
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 30W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 300V
- FET Type :
- N-Channel
- Rise Time :
- 22ns
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 3.7V @ 500μA
- Reach Compliance Code :
- Unknown
- Published :
- 2013
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- DTMOSIV
- Capacitance :
- 700pF
- Continuous Drain Current (ID) :
- 9.7A
- Mounting Type :
- Through Hole
- FET Feature :
- Super Junction
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Turn-Off Delay Time :
- 75 ns
- Drain to Source Breakdown Voltage :
- 600V
- Fall Time (Typ) :
- 5.5 ns
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 4.9A, 10V
- Power Dissipation :
- 30W
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Ta
- RoHS Status :
- RoHS Compliant
- Datasheets
- TK10A60W,S4VX
N-Channel Tube 380m Ω @ 4.9A, 10V ±30V 700pF @ 300V 20nC @ 10V TO-220-3 Full Pack
TK10A60W,S4VX Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 700pF @ 300V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
TK10A60W,S4VX Features
a continuous drain current (ID) of 9.7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
TK10A60W,S4VX Applications
There are a lot of Toshiba Semiconductor and Storage
TK10A60W,S4VX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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