TK10A80E,S4X
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- Mfr.Part #
- TK10A80E,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 10A TO220SIS
- Stock
- 7,156
- In Stock ：
- 7,156
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 140 ns
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 5A, 10V
- Continuous Drain Current (ID) :
- 10A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Vgs (Max) :
- ±30V
- Rise Time :
- 40ns
- Fall Time (Typ) :
- 35 ns
- RoHS Status :
- RoHS Compliant
- Height :
- 18.1mm
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Weight :
- 6.000006g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 800V
- Package / Case :
- TO-220-3 Full Pack
- Number of Channels :
- 1
- Series :
- π-MOSVIII
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Published :
- 2014
- Power Dissipation-Max :
- 50W Tc
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 50W
- Turn On Delay Time :
- 80 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Datasheets
- TK10A80E,S4X
N-Channel Tube 1 Ω @ 5A, 10V ±30V 2000pF @ 25V 46nC @ 10V TO-220-3 Full Pack
TK10A80E,S4X Overview
A device's maximum input capacitance is 2000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 80 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
TK10A80E,S4X Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 140 ns
TK10A80E,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK10A80E,S4X applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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