TK10J80E,S1E

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1Ohm @ 5A, 10V

Fall Time (Typ) :

35 ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-3P(N)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

80 ns

Turn-Off Delay Time :

140 ns

Drain to Source Voltage (Vdss) :

800V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Rds On Max :

1 Ω

Continuous Drain Current (ID) :

10A

Number of Channels :

1

FET Type :

N-Channel

Published :

2014

Power Dissipation-Max :

250W Tc

Input Capacitance :

2nF

Moisture Sensitivity Level (MSL) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Packaging :

Tube

Max Operating Temperature :

150°C

Series :

π-MOSVIII

Package / Case :

TO-3P-3, SC-65-3

Vgs (Max) :

±30V

Drain to Source Resistance :

700mOhm

Rise Time :

40ns

Weight :

6.961991g

RoHS Status :

RoHS Compliant

Factory Lead Time :

16 Weeks