TK12A45D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Continuous Drain Current (ID) :

12A

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

520m Ω @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Rise Time :

25ns

Series :

π-MOSVII

Drain to Source Voltage (Vdss) :

450V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

RoHS Status :

RoHS Compliant

Packaging :

Tube

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

45W Tc