TK4P60D,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Mounting Type :

Surface Mount

Product Category :

MOSFET

Technology :

Si

Manufacturer :

Toshiba

Product Status :

Active

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Power Dissipation (Max) :

100W (Tc)

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Type :

1 N-Channel

Supplier Device Package :

DPAK

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Configuration :

Single

FET Type :

N-Channel

FET Feature :

-

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Drain to Source Voltage (Vdss) :

600 V

Product Type :

MOSFET

Operating Temperature :

150°C

Channel Mode :

Enhancement

Subcategory :

MOSFETs

Vgs (Max) :

±30V

Packaging :

MouseReel

Rds On (Max) @ Id, Vgs :

1.7Ohm @ 2A, 10V

Tradename :

MOSVII

Package :

Tape and Reel (TR)

Brand :

Toshiba

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Package / Case :

DPAK-3

Series :

TK4P60D

Rise Time :

18 ns

Number of Channels :

1 Channel