TP2104N3-G

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Mfr.Part #
TP2104N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 175MA TO92-3
Stock
7,075
In Stock :
7,075

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Number of Channels :
1
Continuous Drain Current :
0.175(A)
Width :
4.19mm
Rad Hardened :
No
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
4 ns
Product :
MOSFET Small Signal
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Product Type :
MOSFET
Published :
2013
RoHS Status :
ROHS3 Compliant
Power Dissipation :
740mW
Current - Continuous Drain (Id) @ 25°C :
175mA Tj
Pin Count :
3
Drain-Source On-Volt :
40(V)
Subcategory :
MOSFETs
Mounting Type :
Through Hole
Package Type :
TO-92
Lead Free :
Lead Free
Brand :
Microchip Technology / Atmel
FET Type :
P-Channel
Fall Time (Typ) :
4 ns
Drain to Source Breakdown Voltage :
-40V
FET Feature :
-
Vgs(th) (Max) @ Id :
2V @ 1mA
Transistor Application :
SWITCHING
RoHS :
Details
Rds On (Max) @ Id, Vgs :
6 Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
-55 °C
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Maximum Operating Temperature :
+150 °C
Factory Lead Time :
6 Weeks
Transistor Type :
1 P-Channel
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
3
Turn-Off Delay Time :
5 ns
Operating Temperature Classification :
Military
Rise Time :
4ns
ECCN Code :
EAR99
Power Dissipation-Max :
740mW Ta
Qualification :
-
Element Configuration :
Single
Mount :
Through Hole
Qualification Status :
Not Qualified
Number of Pins :
3
Mounting :
Through Hole
Height :
5.33mm
Number of Elements :
1
Supplier Device Package :
TO-92-3
Vgs (Max) :
±20V
Packaging :
Bulk
Additional Feature :
LOW THRESHOLD
Power Dissipation (Max) :
740mW (Ta)
MSL :
-
Drain-source On Resistance-Max :
6Ohm
Polarity :
P
Gate-Source Voltage (Max) :
±20(V)
Package :
Bag
Continuous Drain Current (ID) :
-250mA
Series :
-
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Continuous Drain Current Id :
175
Weight :
453.59237mg
Channel Type :
P
Number of Elements per Chip :
1
Length :
5.21mm
Peak Reflow Temperature (Cel) :
Not Applicable
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drain to Source Voltage (Vdss) :
40V
Transistor Element Material :
SILICON
Mounting Style :
Through Hole
Channel Mode :
Enhancement
Operating Temp Range :
-55C to 150C
Type :
Power MOSFET
Base Product Number :
TP2104
Configuration :
Single
Transistor Polarity :
P-Channel
Manufacturer :
Microchip
Terminal Position :
BOTTOM
Datasheets
TP2104N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP2104N3-G from Xinshop,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Number of Pins:3, Type:Power MOSFET, TP2104N3-G pinout, TP2104N3-G datasheet PDF, TP2104N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP2104N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP2104N3-G


P-Channel Bulk 6 Ω @ 500mA, 10V ±20V 60pF @ 25V 40V TO-226-3, TO-92-3 (TO-226AA)

TP2104N3-G Overview


A device's maximal input capacitance is 60pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -250mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

TP2104N3-G Features


a continuous drain current (ID) of -250mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 5 ns
a 40V drain to source voltage (Vdss)


TP2104N3-G Applications


There are a lot of Microchip Technology
TP2104N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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