TPS1100DR
- Mfr.Part #
- TPS1100DR
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 1.6A 8SOIC
- Stock
- 91
- In Stock :
- 91
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-609 Code :
- e4
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Turn On Delay Time :
- 4.5 ns
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Pbfree Code :
- yes
- Height :
- 1.75mm
- Contact Plating :
- Gold
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 10ns
- Gate to Source Voltage (Vgs) :
- 2V
- Length :
- 4.9mm
- Pin Count :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Vgs (Max) :
- +2V, -15V
- Number of Terminations :
- 8
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Terminal Position :
- Dual
- Thickness :
- 1.58mm
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.4Ohm
- Drain to Source Breakdown Voltage :
- 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -40°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- MS-012AA
- Power Dissipation-Max :
- 791mW Ta
- Width :
- 3.91mm
- Turn-Off Delay Time :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- TPS1100
- Fall Time (Typ) :
- 10 ns
- Continuous Drain Current (ID) :
- 1.6A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 791mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- TPS1100DR

P-Channel Tape & Reel (TR) 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 8-SOIC (0.154, 3.90mm Width)
TPS1100DR Overview
This device conducts a continuous drain current (ID) of 1.6A, which is the maximum continuous current transistor can conduct.Using VGS=15V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 15V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 13 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 2V.In order to reduce power consumption, this device uses a drive voltage of 2.7V 10V volts (2.7V 10V).
TPS1100DR Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 13 ns
TPS1100DR Applications
There are a lot of Texas Instruments
TPS1100DR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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