TPS1100DR

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Mfr.Part #
TPS1100DR
Manufacturer
Texas Instruments
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 15V 1.6A 8SOIC
Stock
91
In Stock :
91

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Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
8-SOIC (0.154, 3.90mm Width)
JESD-609 Code :
e4
ECCN Code :
EAR99
FET Type :
P-Channel
Turn On Delay Time :
4.5 ns
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Pbfree Code :
yes
Height :
1.75mm
Contact Plating :
Gold
Number of Pins :
8
Radiation Hardening :
No
Peak Reflow Temperature (Cel) :
260
Rise Time :
10ns
Gate to Source Voltage (Vgs) :
2V
Length :
4.9mm
Pin Count :
8
Gate Charge (Qg) (Max) @ Vgs :
5.45nC @ 10V
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Terminal Form :
Gull wing
Vgs (Max) :
+2V, -15V
Number of Terminations :
8
Additional Feature :
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Terminal Position :
Dual
Thickness :
1.58mm
Number of Elements :
1
Drain-source On Resistance-Max :
0.4Ohm
Drain to Source Breakdown Voltage :
15V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Operating Temperature :
-40°C~150°C TJ
Rds On (Max) @ Id, Vgs :
180m Ω @ 1.5A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
2.7V 10V
Packaging :
Tape and Reel (TR)
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
MS-012AA
Power Dissipation-Max :
791mW Ta
Width :
3.91mm
Turn-Off Delay Time :
13 ns
Current - Continuous Drain (Id) @ 25°C :
1.6A Ta
Factory Lead Time :
6 Weeks
Base Part Number :
TPS1100
Fall Time (Typ) :
10 ns
Continuous Drain Current (ID) :
1.6A
Mounting Type :
Surface Mount
Power Dissipation :
791mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
TPS1100DR
Introducing Transistors - FETs, MOSFETs - Single Texas Instruments TPS1100DR from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Number of Terminations:8, Operating Temperature:-40°C~150°C TJ, Base Part Number:TPS1100, Mounting Type:Surface Mount, TPS1100DR pinout, TPS1100DR datasheet PDF, TPS1100DR amp .Beyond Transistors - FETs, MOSFETs - Single Texas Instruments TPS1100DR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments TPS1100DR


P-Channel Tape & Reel (TR) 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 8-SOIC (0.154, 3.90mm Width)

TPS1100DR Overview


This device conducts a continuous drain current (ID) of 1.6A, which is the maximum continuous current transistor can conduct.Using VGS=15V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 15V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 13 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 2V.In order to reduce power consumption, this device uses a drive voltage of 2.7V 10V volts (2.7V 10V).

TPS1100DR Features


a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 13 ns


TPS1100DR Applications


There are a lot of Texas Instruments
TPS1100DR applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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