UMD12NFHATR

Manufacturer :

ROHM Semiconductor

Product Category :

Unclassified

Collector-emitter saturation voltage :

-300mV

Collector Current-Max (IC) :

0.1 A

Output Voltage :

100 mV, -100 mV

Collector continuous current :

-100mA

ECCN Code :

EAR99

Collector-emitter maximum voltage VCEO :

-50V

Power dissipation Pd :

200mW

Package/Enclosure :

SOT-23

Terminal Form :

Gull wing

DC current gain hFE :

80

Continuous Collector Current :

100mA

Polarity/Channel Type :

NPN AND PNP

Series :

*

Transistor Element Material :

SILICON

Surface Mount :

yes

Power Dissipation :

150mW

JESD-609 Code :

e2

Package / Case :

SOT-363-6

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Factory Lead Time :

13 Weeks

Configuration :

Dual

RoHS :

Details

JESD-30 Code :

R-PDSO-G6

Maximum Operating Temperature :

+ 150 C

R1 :

4.7K Ohms

Collector-Emitter Voltage-Max :

50 V

Subcategory :

Transistors

Manufacturer :

Rohm Semiconductor

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Terminals :

6

Reference Standard :

AEC-Q101

Product Status :

Active

Transistor Application :

SWITCHING

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Packaging :

MouseReel

Package :

Tape and Reel (TR)

Typical Resistor Ratio :

1

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

Brand :

Rohm Semiconductor

Terminal Position :

Dual

Base Product Number :

UMD12

Transistor Polarity :

NPN and PNP Complement

Mounting Style :

SMD/SMT

Qualification :

-

DC Current Gain-Min (hFE) :

68

Reach Compliance Code :

Compliant

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

R2 :

47k Ohms

Characteristic frequency fT :

250MHz