UMT1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

2 PNP (Dual)

Max Frequency :

140MHz

Polarity :

PNP

Transition Frequency :

140MHz

Height :

900μm

Terminal Finish :

Tin/Copper (Sn/Cu)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2004

JESD-609 Code :

e2

Gain Bandwidth Product :

140MHz

Continuous Collector Current :

-150mA

Number of Terminations :

6

Pin Count :

6

hFE Min :

120

Length :

2mm

Number of Elements :

2

Voltage - Rated DC :

-50V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

-6V

Output Voltage :

50V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

60V

Width :

1.25mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

VCEsat-Max :

0.5 V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Collector Emitter Saturation Voltage :

500mV

Transistor Application :

AMPLIFIER

Base Part Number :

*MT1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

HTS Code :

8541.21.00.75

Current Rating :

-150mA

Lead Free :

Lead Free

Max Collector Current :

150mA

Pbfree Code :

yes

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

13 Weeks