UMY1NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Continuous Collector Current :

150mA

hFE Min :

120

Current Rating :

150mA

Height :

900μm

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN, PNP (Emitter Coupled)

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

60V

Frequency - Transition :

180MHz 140MHz

Number of Terminations :

5

Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Radiation Hardening :

No

Max Collector Current :

150mA

Factory Lead Time :

13 Weeks

Pbfree Code :

yes

Transistor Element Material :

SILICON

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

Terminal Form :

Gull wing

VCEsat-Max :

0.4 V

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

7V

Mounting Type :

Surface Mount

Length :

2mm

REACH SVHC :

No SVHC

Published :

2004

Transition Frequency :

180MHz

Number of Pins :

5

Max Power Dissipation :

150mW

JESD-609 Code :

e2

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Mount :

Surface Mount

Gain Bandwidth Product :

180MHz

Max Frequency :

100MHz

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Pin Count :

5

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Collector Emitter Saturation Voltage :

400mV

Width :

1.25mm

Base Part Number :

*MY1