VN0808L-G

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Mfr.Part #
VN0808L-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 80V 300MA TO92-3
Stock
1,969
In Stock :
1,969

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
4Ohm
Mount :
Through Hole
Channel Type :
N Channel
Brand :
Microchip Technology / Atmel
Number of Pins :
3
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Surface Mount :
No
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs :
4 Ω @ 1A, 10V
Terminal Finish :
Matte Tin (Sn)
Vgs (Max) :
±30V
Subcategory :
MOSFETs
Number of Elements :
1
Operating Temp Range :
-55C to 150C
Rad Hardened :
No
Width :
4.19mm
Qualification :
-
Continuous Drain Current :
0.3(A)
Power Dissipation (Max) :
1W (Tc)
Weight :
453.59237mg
Package :
Bag
Drain to Source Breakdown Voltage :
80V
Polarity/Channel Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Series :
-
Power Dissipation-Max :
1W Tc
Peak Reflow Temperature (Cel) :
Not Applicable
Package Type :
TO-92
DS Breakdown Voltage-Min :
80 V
Factory Lead Time :
6 Weeks
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
300mA
Supplier Device Package :
TO-92-3
Element Configuration :
Single
Transistor Element Material :
SILICON
Length :
5.21mm
Operating Temperature Classification :
Military
JESD-30 Code :
O-PBCY-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Mounting :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate-Source Voltage (Max) :
±30(V)
Drain-Source On-Volt :
80(V)
Base Product Number :
VN0808
Vgs(th) (Max) @ Id :
2V @ 1mA
Height :
5.33mm
Drain to Source Voltage (Vdss) :
80 V
Packaging :
Bulk
Reach Compliance Code :
Compliant
RoHS :
Details
Power Dissipation :
1W
Pin Count :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
MSL :
-
Terminal Position :
BOTTOM
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-92
ECCN Code :
EAR99
Product Category :
MOSFET
Manufacturer :
Microchip
Transistor Application :
SWITCHING
Polarity :
N
Current - Continuous Drain (Id) @ 25°C :
300mA Tj
Mounting Type :
Through Hole
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
30V
Product Type :
MOSFET
Additional Feature :
HIGH INPUT IMPEDANCE
Type :
Power MOSFET
FET Type :
N-Channel
Number of Channels :
1
FET Feature :
-
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Transistor Type :
1 N-Channel
Continuous Drain Current Id :
300
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Qualification Status :
Not Qualified
Package Shape :
Round
Feedback Cap-Max (Crss) :
10 pF
Configuration :
Single
Published :
2009
Number of Terminations :
3
Datasheets
VN0808L-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology VN0808L-G from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Type:Power MOSFET, Number of Channels:1, Number of Terminations:3, VN0808L-G pinout, VN0808L-G datasheet PDF, VN0808L-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology VN0808L-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology VN0808L-G


N-Channel Bulk 4 Ω @ 1A, 10V ±30V 50pF @ 25V 80 V TO-226-3, TO-92-3 (TO-226AA)

VN0808L-G Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 300mA.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 80 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80 V.Using drive voltage (10V) reduces this device's overall power consumption.

VN0808L-G Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 80V voltage
a 80 V drain to source voltage (Vdss)


VN0808L-G Applications


There are a lot of Microchip Technology
VN0808L-G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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