VN0808L-G
- Mfr.Part #
- VN0808L-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 300MA TO92-3
- Stock
- 1,969
- In Stock :
- 1,969
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 4Ohm
- Mount :
- Through Hole
- Channel Type :
- N Channel
- Brand :
- Microchip Technology / Atmel
- Number of Pins :
- 3
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Surface Mount :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 1A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±30V
- Subcategory :
- MOSFETs
- Number of Elements :
- 1
- Operating Temp Range :
- -55C to 150C
- Rad Hardened :
- No
- Width :
- 4.19mm
- Qualification :
- -
- Continuous Drain Current :
- 0.3(A)
- Power Dissipation (Max) :
- 1W (Tc)
- Weight :
- 453.59237mg
- Package :
- Bag
- Drain to Source Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Series :
- -
- Power Dissipation-Max :
- 1W Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Package Type :
- TO-92
- DS Breakdown Voltage-Min :
- 80 V
- Factory Lead Time :
- 6 Weeks
- Terminal Form :
- THROUGH-HOLE
- Continuous Drain Current (ID) :
- 300mA
- Supplier Device Package :
- TO-92-3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Length :
- 5.21mm
- Operating Temperature Classification :
- Military
- JESD-30 Code :
- O-PBCY-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Mounting :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate-Source Voltage (Max) :
- ±30(V)
- Drain-Source On-Volt :
- 80(V)
- Base Product Number :
- VN0808
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Height :
- 5.33mm
- Drain to Source Voltage (Vdss) :
- 80 V
- Packaging :
- Bulk
- Reach Compliance Code :
- Compliant
- RoHS :
- Details
- Power Dissipation :
- 1W
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- MSL :
- -
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-92
- ECCN Code :
- EAR99
- Product Category :
- MOSFET
- Manufacturer :
- Microchip
- Transistor Application :
- SWITCHING
- Polarity :
- N
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Tj
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Product Type :
- MOSFET
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Type :
- Power MOSFET
- FET Type :
- N-Channel
- Number of Channels :
- 1
- FET Feature :
- -
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current Id :
- 300
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Qualification Status :
- Not Qualified
- Package Shape :
- Round
- Feedback Cap-Max (Crss) :
- 10 pF
- Configuration :
- Single
- Published :
- 2009
- Number of Terminations :
- 3
- Datasheets
- VN0808L-G

N-Channel Bulk 4 Ω @ 1A, 10V ±30V 50pF @ 25V 80 V TO-226-3, TO-92-3 (TO-226AA)
VN0808L-G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 300mA.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 80 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80 V.Using drive voltage (10V) reduces this device's overall power consumption.
VN0808L-G Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 80V voltage
a 80 V drain to source voltage (Vdss)
VN0808L-G Applications
There are a lot of Microchip Technology
VN0808L-G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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